SIMPLE MEASUREMENT OF CARRIER INDUCED REFRACTIVE-INDEX CHANGE IN INGAASP PIN RIDGE WAVE-GUIDE STRUCTURES

被引：11

作者：

SCHRAUD, G ^{[1
]}

MULLER, G ^{[1
]}

STOLL, L ^{[1
]}

WOLFF, U ^{[1
]}

机构：

[1] SIEMENS AG,MAT SCI & ELECTR RES LABS,W-8000 MUNICH 83,GERMANY

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 04期

关键词：

OPTOELECTRONICS; INTEGRATED OPTICS; REFRACTIVE-INDEX CHANGE;

D O I：

10.1049/el:19910187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The carrier induced refractive-index change DELTA-n in integrated InGaAsP 1.30-mu-m interferometer structures is evaluated by 1.55-mu-m transmission measurements. At carrier concentrations N from 8 x 10(16)/cm3 to 3 x 10(18)/cm3 a value of DELTA-n/N = -1 x 10(-20) cm3 is obtained. A good agreement of the experimental results with theoretical predictions on bandfilling, plasma effect and bandgap shrinkage is demonstrated.

引用

页码：297 / 298

页数：2

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