INCORPORATION OF BORON INTO UHV/CVD-GROWN GERMANIUM-SILICON EPITAXIAL LAYERS

被引：12

作者：

GREVE, DW

RACANELLI, M

机构：

[1] Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, 15213-3890, PA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1992年 / 21卷 / 06期

关键词：

DOPING; GERMANIUM-SILICON; EPITAXY;

D O I：

10.1007/BF02655426

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Doping of UHV/CVD-grown germanium-silicon epitaxial layers by diborane is reported. The boron concentration is linear in diborane flow rate and is consistent with a surface reaction mechanism in which two surface sites are required for adsorption. The sticking coefficient of diborane on a bare silicon or germanium-silicon surface is found to be about 1.2 X 10(-2). Abrupt retrograde profiles can be grown successfully provided a pause is introduced before growing more lightly doped layers.

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页码：593 / 597

页数：5

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