LOW-TEMPERATURE CONDUCTIVITY OF DOPED SEMICONDUCTORS - MASS ANISOTROPY AND INTERVALLEY EFFECTS

被引:37
作者
BHATT, RN
LEE, PA
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D O I
10.1016/0038-1098(83)91011-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:755 / 759
页数:5
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