LOW-TEMPERATURE CONDUCTIVITY OF DOPED SEMICONDUCTORS - MASS ANISOTROPY AND INTERVALLEY EFFECTS

被引：37

作者：

BHATT, RN

LEE, PA

机构：

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 48卷 / 09期

关键词：

D O I：

10.1016/0038-1098(83)91011-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：755 / 759

页数：5

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