ON THE INFLUENCE OF SURFACE RECONSTRUCTION ON CRYSTAL-GROWTH PROCESSES

被引:85
作者
GILING, LJ
VANENCKEVORT, WJP
机构
关键词
D O I
10.1016/0039-6028(85)90828-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:567 / 583
页数:17
相关论文
共 80 条
[11]   THE TEMPERATURE DISTRIBUTION IN PULLED GERMANIUM CRYSTALS DURING GROWTH [J].
BRICE, JC ;
WHIFFIN, PAC .
SOLID-STATE ELECTRONICS, 1964, 7 (02) :183-187
[12]   GAAS GROWTH BY VAPOR-PHASE TRANSPORT .2. INTERPRETATION OF GROWTH OF (001) FACES BY ADSORPTION OF GALLIUM MONOCHLORIDE AND ARSENIC MOLECULES [J].
CADORET, R ;
HOLLAN, L ;
LOYAU, JB ;
OBERLIN, M ;
OBERLIN, A .
JOURNAL OF CRYSTAL GROWTH, 1975, 29 (02) :187-194
[13]   ATOMIC AND ELECTRONIC-STRUCTURES OF RECONSTRUCTED SI(100) SURFACES [J].
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1979, 43 (01) :43-47
[14]   THEORETICAL-ANALYSIS OF EQUILIBRIUM ADSORPTION LAYERS IN CVD SYSTEMS (SI-H-CL, GA-AS-H-CL) [J].
CHERNOV, AA ;
RUSAIKIN, MP .
JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :73-81
[15]   GROWTH KINETICS AND CAPTURE OF IMPURITIES DURING GAS-PHASE CRYSTALLIZATION [J].
CHERNOV, AA .
JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :55-76
[16]  
CHERNOV AA, 1967, SOVIET PHYS DOKL, V21, P300
[18]   ON THE FORMATION OF ETCH GROOVES AROUND STRESS-FIELDS DUE TO INHOMOGENEOUS IMPURITY DISTRIBUTION IN KH2PO4 SINGLE-CRYSTALS [J].
DAM, B ;
VANENCKEVORT, WJP .
JOURNAL OF CRYSTAL GROWTH, 1981, 51 (03) :607-623
[19]  
DEMOOR HHC, UNPUB
[20]  
DUKE CB, 1978, CHEM PHYSICS SOLID S, P373