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INSITU MEASUREMENTS OF THE FERMI LEVEL POSITION IN UNDOPED AND DOPED A-SI-H FILMS

被引：6
作者：
SIEFERT, JM
DEROSNY, G
机构：
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1985年 / 77-8卷
关键词：
D O I：
10.1016/0022-3093(85)90715-X
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：531 / 534
页数：4
相关论文
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[2]  
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[3]   GROWTH OF HYDROGENATED AMORPHOUS-SILICON DUE TO CONTROLLED ION-BOMBARDMENT FROM A PURE SILANE PLASMA [J].
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[4]   PHOTOVOLTAGE PROFILING OF HYDROGENATED AMORPHOUS SI SOLAR-CELLS [J].
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[5]   SURFACE-STATES IN P-DOPED AND B-DOPED AMORPHOUS HYDROGENATED SILICON [J].
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