SINGLE-SOURCE PRECURSORS TO GROUP-III (13)METAL NITRIDES

被引：11

作者：

GETMAN, TD

FRANKLIN, GW

机构：

[1] Department of Chemistry, Southern Illinois University at Edwardsville, Edwardsville

来源：

COMMENTS ON INORGANIC CHEMISTRY | 1995年 / 17卷 / 02期

关键词：

ALUMINUM NITRIDE; GALLIUM NITRIDE; INDIUM NITRIDE; NITRIDE FILMS; CHEMICAL VAPOR DEPOSITION; SINGLE SOURCE PRECURSOR;

D O I：

10.1080/02603599508035783

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

A review of the preparation of single source precursors (SSPs) to the group III metal nitrides (aluminum nitride, gallium nitride and indium nitride) is given. The SSPs are divided into three categories (1) volatile small molecules for chemical vapor deposition studies, (2) polymeric precursors for the formation of fibers and thin films, and (3) compounds developed for the formation of small-particle powders. The methods for conversion of the SSPs into the desired nitrides and the analysis of the resulting nitride materials are given whenever possible.

引用

收藏

页码：79 / 94

页数：16

相关论文

共 35 条

[1] GROWTH OF GAN THIN-FILMS FROM TRIETHYLGALLIUM MONAMINE [J].

ANDREWS, JE ;

LITTLEJOHN, MA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1273-1275

[2] Organometallic Azides as Precursors for Aluminum Nitride Thin Films [J].

Boyd, David C. ;

Haasch, Richard T. ;

Mantell, Daniel R. ;

Schulze, Roland K. ;

Evans, John F. ;

Gladfelter, Wayne L. .

CHEMISTRY OF MATERIALS, 1989, 1 (01) :119-124

[3] GROWTH-KINETICS AND CHARACTERIZATIONS OF GALLIUM NITRIDE THIN-FILMS BY REMOTE PECVD [J].

CHOI, SW ;

BACHMANN, KJ ;

LUCOVSKY, G .

JOURNAL OF MATERIALS RESEARCH, 1993, 8 (04) :847-854

[4] PREPARATION AND PROPERTIES OF ALUMINUM NITRIDE FILMS [J].

CHU, TL ;

KELM, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (07) :995-1000

[5] GALLIUM NITRIDE FILMS [J].

CHU, TL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (07) :1200-&

[6] GROWTH OF GALLIUM NITRIDE THIN-FILMS BY ELECTRON-CYCLOTRON RESONANCE MICROWAVE PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY [J].

EDDY, CR ;

MOUSTAKAS, TD ;

SCANLON, J .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (01) :448-455

[7]

GLADFELTER WL, 1990, MATER RES SOC SYMP P, V180, P1017, DOI 10.1557/PROC-180-1017

[8] CHEMICAL VAPOR-DEPOSITION OF ALUMINUM NITRIDE THIN-FILMS [J].

GORDON, RG ;

RIAZ, U ;

HOFFMAN, DM .

JOURNAL OF MATERIALS RESEARCH, 1992, 7 (07) :1679-1684

[9] ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION OF ALUMINUM NITRIDE THIN-FILMS AT 200-250-DEGREES C [J].

GORDON, RG ;

HOFFMAN, DM ;

RIAZ, U .

JOURNAL OF MATERIALS RESEARCH, 1991, 6 (01) :5-7

[10] CHEMICAL-VAPOR-DEPOSITION OF NITRIDE THIN-FILMS [J].

HOFFMAN, DM .

POLYHEDRON, 1994, 13 (08) :1169-1179

← 1 2 3 4 →