STRAIN IN EPITAXIAL COSI2 FILMS ON SI (111) AND INFERENCE FOR PSEUDOMORPHIC GROWTH

被引：13

作者：

BAI, G ^{[1
]}

NICOLET, MA ^{[1
]}

VREELAND, T ^{[1
]}

YE, Q ^{[1
]}

WANG, KL ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,LOS ANGELES,CA 90024

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 18期

关键词：

D O I：

10.1063/1.102327

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1874 / 1876

页数：3

共 20 条

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[5]

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[6]

DEPPE DG, 1988, J APPL PHYS, V64, P1293

[7]

FAN JCC, 1986, MATERIALS RES SOC S, V67

[8]

FAN JCC, 1987, MATERIALS RES SOC S, V91

[9] GROWTH TEMPERATURE-DEPENDENCE OF INTERFACIAL ABRUPTNESS IN SI/GE HETEROEPITAXY STUDIED BY RAMAN-SPECTROSCOPY AND MEDIUM ENERGY ION-SCATTERING [J].

IYER, SS ;

TSANG, JC ;

COPEL, MW ;

PUKITE, PR ;

TROMP, RM .

APPLIED PHYSICS LETTERS, 1989, 54 (03) :219-221

[10]

JAMIESON DN, 1987, MATER RES SOC S P, V91, P479

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