GROWTH AND CRYSTALLIZATION OF AMORPHOUS LAYERS IN SILICON RESULTING FROM ENERGETIC ION-BOMBARDMENT

被引：5

作者：

HOLMEN, G

LINNROS, J

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 22卷 / 04期

关键词：

D O I：

10.1016/0168-583X(87)90153-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：520 / 523

页数：4

共 15 条

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[9] ION-BEAM-INDUCED EPITAXIAL REGROWTH OF AMORPHOUS LAYERS IN SILICON ON SAPPHIRE [J].

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[10] PROPORTIONALITY BETWEEN ION-BEAM-INDUCED EPITAXIAL REGROWTH IN SILICON AND NUCLEAR-ENERGY DEPOSITION [J].

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SVENSSON, B .

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