HEAVY-ION MICROSCOPY OF SINGLE EVENT UPSETS IN CMOS SRAMS

被引：28

作者：

METZGER, S

DREUTE, J

HEINRICH, W

ROCHER, H

FISCHER, BE

HARBOESORENSEN, R

ADAMS, L

机构：

[1] GESELLS SCHWERIONENFORSCH MBH,D-64220 DARMSTADT,GERMANY

[2] ESA,ESTEC,2200 AG NOORDWIJK,NETHERLANDS

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 03期

关键词：

D O I：

10.1109/23.299804

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine the sensitivity of integrated circuits (IC) to heavy ion irradiation. This method offers the possibility to directly image those parts of an IC which are sensitive to ion-induced malfunctions. By a 3-dimensional simulation of charge collection across p-n-micro-junctions we can predict SEU cross-sections. For a MHS65162 2k x 8bit CMOS SRAM we found two regions per bit with different sensitivity and measured a total cross-section of (71 +/- 18)mum2 for a bitflip per cell and simulated 60mum2 with an argon beam of 1.4 MeV/nucl. (LET of 19.7 MeV/mg/cm2).

引用

收藏

页码：589 / 592

页数：4

相关论文

共 11 条

[1] SINGLE EVENT UPSET IMAGING WITH A NUCLEAR MICROPROBE [J].

DOYLE, BL ;

HORN, KM ;

WALSH, DS ;

SEXTON, FW .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 64 (1-4) :313-320

[2]

DREUTE J, P RADECS 91 LAGRANDE, P505

[3] SINGLE-PARTICLE TECHNIQUES [J].

FISCHER, BE .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 54 (1-3) :401-406

[4] THE HEAVY-ION MICROPROBE AT GSI - USED FOR SINGLE ION MICROMECHANICS [J].

FISCHER, BE .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 30 (03) :284-288

[5] THE SCANNING HEAVY-ION MICROSCOPE AT GSI [J].

FISCHER, BE .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 10-1 (MAY) :693-696

[6] NUCLEAR MICROPROBE IMAGING OF SINGLE-EVENT UPSETS [J].

HORN, KM ;

DOYLE, BL ;

SEXTON, FW .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1992, 39 (01) :7-12

[7]

HUBERT F, 1990, ATOMIC DATA NUCLEAR, V46

[8] MICROBEAM SYSTEM FOR STUDY OF SINGLE EVENT UPSET OF SEMICONDUCTOR-DEVICES [J].

KAMIYA, T ;

UTSUNOMIYA, N ;

MINEHARA, E ;

TANAKA, R ;

OHDOMARI, I .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 64 (1-4) :362-366

[9] MODELING CHARGE COLLECTION AND SINGLE EVENT UPSETS IN MICROELECTRONICS [J].

MCNULTY, PJ ;

ABDELKADER, WG ;

LYNCH, JE .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 61 (01) :52-60

[10]

SEEGER K, 1992, HALBLEITERPHYSIK EIN, V1