15 GBIT/S HIGH-GAIN LIMITING AMPLIFIER FABRICATED USING SI-BIPOLAR PRODUCTION TECHNOLOGY

被引：12

作者：

MOLLER, M

REIN, HM

WERNZ, H

机构：

[1] Ruhr-University Bochum, AG Halbleiterbauelemente

[2] ANT Nachrichtentechnik

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 18期

关键词：

SILICON; BIPOLAR INTEGRATED CIRCUITS; AMPLIFIERS; OPTICAL COMMUNICATION; LIMITERS;

D O I：

10.1049/el:19941013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A limiting amplifier IC with high gain (S-21 = 52dB) and wide input dynamic range (similar to 46dB) is presented which can be operated up to 15Gbit/s. Low input return loss and two separate output buffers are further important features. The circuit, which will be used as a main amplifier for a 10.8 Gbit/s optical-fibre system, was fabricated using Si-bipolar production technology.

引用

页码：1519 / 1521

页数：3

共 9 条

[1]

AKAGI J, 1990, GAAS IC S, P45

[2]

KLOSE H, 1993, 1993 P BCTM MINN, P125

[3] A COMPACT BIPOLAR-TRANSISTOR MODEL FOR VERY-HIGH-FREQUENCY APPLICATIONS WITH SPECIAL REGARD TO NARROW EMITTER STRIPES AND HIGH-CURRENT DENSITIES [J].