A LIMITING AMPLIFIER WITH LOW PHASE DEVIATION USING AN ALGAAS GAAS HBT

被引：8

作者：

NAKAMURA, M

IMAI, Y

SANO, E

YAMAUCHI, Y

NAKAJIMA, O

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1992年 / 27卷 / 10期

关键词：

D O I：

10.1109/4.156446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design and performance of an AlGaAs/GaAs HB limiting amplifier. It is revealed that the main cause of phase shift deviation in a limiting amplifier is the bias dependence of the input capacitance, which is the dominant nonlinear factor in a transistor. A circuit design featuring a differential configuration with emitter peaking technique lowers phase deviation and widens the frequency band. The device achieves high-frequency operation of 15 GHz with a low phase shift deviation of 3-degrees over a 15-dB input dynamic range.

引用

页码：1421 / 1427

页数：7

共 9 条

[1]

AKAGI J, 1990, GAAS IC S, P45

[2]

CHERRY M, 1963, P I ELECTR ENG, V110, P375

[3]

Genin R., 1986, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest (Cat. No.86CH2372-1), P74

[4] GIGAHERTZ-BAND HIGH-GAIN GAAS MONOLITHIC AMPLIFIERS USING PARALLEL FEEDBACK TECHNIQUE [J].