4-GHZ BAND GAAS MONOLITHIC LIMITING AMPLIFIER

被引:6
作者
WAKIMOTO, T
AKAZAWA, Y
KAWARADA, K
机构
关键词
D O I
10.1109/JSSC.1986.1052654
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1103 / 1108
页数:6
相关论文
共 10 条
[2]   SEMI-EMPIRICAL EXPRESSION FOR DIRECT TRANSCONDUCTANCE AND EQUIVALENT SATURATED VELOCITY IN SHORT-GATE-LENGTH MESFETS [J].
GRAFFEUIL, J ;
ROSSEL, P .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (05) :185-188
[3]   AN ACCURATE JFET MESFET MODEL FOR CIRCUIT ANALYSIS [J].
HARTGRING, CD .
SOLID-STATE ELECTRONICS, 1982, 25 (03) :233-240
[4]   COMPACT DC MODEL OF GAAS-FETS FOR LARGE-SIGNAL COMPUTER CALCULATION [J].
KACPRZAK, T ;
MATERKA, A .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (02) :211-213
[5]  
SCOTT BN, 1982, IEEE MTT S, P482
[6]   MODELING AND SIMULATION OF INSULATED-GATE FIELD-EFFECT TRANSISTOR SWITCHING CIRCUITS [J].
SHICHMAN, H ;
HODGES, DA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1968, SC 3 (03) :285-&
[7]  
SZE SM, 1969, PHYSICS SEMICONDUCTO
[8]   GAAS-FET LARGE-SIGNAL MODEL AND ITS APPLICATION TO CIRCUIT DESIGNS [J].
TAJIMA, Y ;
WRONA, B ;
MISHIMA, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :171-175
[9]   A MESFET VARIABLE-CAPACITANCE MODEL FOR GAAS INTEGRATED-CIRCUIT SIMULATION [J].
TAKADA, T ;
YOKOYAMA, K ;
IDA, M ;
SUDO, T .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (05) :719-724
[10]  
TAKI T, 1979, IEEE J SOLID-ST CIRC, V13, P724