APPROXIMATE FORMULAS FOR THERMAL-RESISTANCE OF IMPATT DIODES COMPARED WITH COMPUTER CALCULATIONS

被引：22

作者：

HOLWAY, LH ^{[1
]}

ADLERSTEIN, MG ^{[1
]}

机构：

[1] RAYTHEON CO,DIV RES,WALTHAM,MA 02154

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1977年 / 24卷 / 02期

关键词：

D O I：

10.1109/T-ED.1977.18696

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：156 / 159

页数：4

相关论文

共 6 条

[1] CARSLAW HS, 1959, CONDUCTION HEAT SOLI, P216
[2] MULTIMESA VERSUS ANNULAR CONSTRUCTION FOR HIGH AVERAGE POWER IN SEMICONDUCTOR DEVICES
FREY, J
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (08) : 981 - &
[3] TEMPERATURE AND CURRENT DISTRIBUTION IN AN AVALANCHING P-N JUNCTION
GIBBONS, G
MISAWA, T
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (11) : 1007 - &
[4] HOLWAY LH, 1976, IEEE T ELECTRON DEC, P1304
[5] SPREADING RESISTANCE IN CYLINDRICAL SEMICONDUCTOR DEVICES
KENNEDY, DP
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1490 - 1497
[6] VARGA RS, 1962, MATRIX ITERATIVE ANA, P209