X-RAY PHOTOELECTRON-SPECTROSCOPY AND ATOMIC-FORCE MICROSCOPY SURFACE STUDY OF GAAS(100) CLEANING PROCEDURES

被引：26

作者：

SONG, Z

SHOGEN, S

KAWASAKI, M

SUEMUNE, I

机构：

[1] Hokkaido Univ, Sapporo

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 01期

关键词：

D O I：

10.1116/1.587989

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The chemical composition of GaAs(100) surfaces after HCl/H2O wet etching sequences has been examined with x-ray photoelectron spectroscopy (XPS). XPS measurements show that oxides and chlorides are removed from the GaAs surface by the HCl solution etching in 10-20 min and subsequent H2O rinse in several seconds. The surface of the GaAs substrate thus prepared has been examined with atomic force microscopy. The surface flatness is so improved by the HCl/H2O treatment that the surface undulation remains within a ± 1 monolayer fluctuation over a 1×1 μm surface area.

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页码：77 / 82

页数：6

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