INVESTIGATION OF METAL-SEMICONDUCTOR INTERFACE STATES BY CONSTANT EMISSION RATE AND CONSTANT CAPTURE RATE CAPACITANCE SPECTROSCOPIES

被引：8

作者：

MURET, P

DENEUVILLE, A

机构：

来源：

SURFACE SCIENCE | 1986年 / 168卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90916-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

收藏

页码：830 / 837

页数：8

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