THERMAL AND PULSED LASER EVAPORATION OF SINGLE-PHASE ASXP1-X ALLOYS

[1] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[2] CARLSON KD, 1968, ADV CHEM SER, V72, P245

[3] GROWTH OF HGCDTE FILMS BY LASER-INDUCED EVAPORATION AND DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 182 - 186

[4] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[5] INTERACTION OF PULSED COHERENT LIGHT-BEAM WITH COMPLEX TARGET - APPLICATION TO PRODUCTION OF THIN-FILM COMPOUNDS [J]. THIN SOLID FILMS, 1975, 29 (01) : 29 - 41

[6] DRAGANESCU V, 1973, STUD CERCET FIZ, V25, P847

[7] GUTBIER H, 1961, Z NATURFORSCH PT A, V16, P268

[8] Hansen M., 1965, CONSTITUTION BINARY

[9] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927

[10] CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 311 - 312

[1] ON THE USE OF ASH3 IN THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (09) : 701 - 703

[2] CARLSON KD, 1968, ADV CHEM SER, V72, P245

[3] GROWTH OF HGCDTE FILMS BY LASER-INDUCED EVAPORATION AND DEPOSITION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01): : 182 - 186

[4] RECENT DEVELOPMENTS IN MOLECULAR-BEAM EPITAXY (MBE) [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (02): : 275 - 284

[5] INTERACTION OF PULSED COHERENT LIGHT-BEAM WITH COMPLEX TARGET - APPLICATION TO PRODUCTION OF THIN-FILM COMPOUNDS [J]. THIN SOLID FILMS, 1975, 29 (01) : 29 - 41

[6] DRAGANESCU V, 1973, STUD CERCET FIZ, V25, P847

[7] GUTBIER H, 1961, Z NATURFORSCH PT A, V16, P268

[8] Hansen M., 1965, CONSTITUTION BINARY

[9] KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927

[10] CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 311 - 312