ION-SENSITIVE FIELD-EFFECT TRANSISTOR WITH SILICON-NITRIDE GATE FOR PH SENSING

被引：37

作者：

LIU, BD

SU, YK

CHEN, SC

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1989年 / 67卷 / 01期

关键词：

D O I：

10.1080/00207218908921055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：59 / 63

页数：5

共 11 条

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[9] HYDROGEN, CALCIUM, AND POTASSIUM ION-SENSITIVE FET TRANSDUCERS - PRELIMINARY-REPORT [J].

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