OCCUPATION FLUCTUATION NOISE - A FUNDAMENTAL SOURCE OF LINEWIDTH BROADENING IN SEMICONDUCTOR-LASERS

被引：46

作者：

VAHALA, K

YARIV, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 02期

关键词：

D O I：

10.1063/1.94260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：140 / 142

页数：3

共 9 条

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[6]

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[7] OBSERVATION OF LINEWIDTH BROADENING IN (GAAL)AS DIODE-LASERS DUE TO ELECTRON NUMBER FLUCTUATIONS [J].

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MOORADIAN, A .

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[8] OUTPUT POWER AND TEMPERATURE-DEPENDENCE OF THE LINEWIDTH OF SINGLE-FREQUENCY CW (GAAL)AS DIODE-LASERS [J].

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[9]

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