OBSERVATION OF LINEWIDTH BROADENING IN (GAAL)AS DIODE-LASERS DUE TO ELECTRON NUMBER FLUCTUATIONS

被引：66

作者：

WELFORD, D

MOORADIAN, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 07期

关键词：

D O I：

10.1063/1.93179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：560 / 562

页数：3

相关论文

共 9 条

[1] SPECTRAL CHARACTERISTICS OF EXTERNAL-CAVITY CONTROLLED SEMICONDUCTOR-LASERS
FLEMING, MW
MOORADIAN, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (01) : 44 - 59
[2] FUNDAMENTAL LINE BROADENING OF SINGLE-MODE (GAAL)AS DIODE-LASERS
FLEMING, MW
MOORADIAN, A
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (07) : 511 - 513
[3] SPECTRAL DEPENDENCE OF THE CHANGE IN REFRACTIVE-INDEX DUE TO CARRIER INJECTION IN GAAS-LASERS
HENRY, CH
LOGAN, RA
BERTNESS, KA
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (07) : 4457 - 4461
[4] DEPENDENCE OF THRESHOLD AND ELECTRON LIFETIME ON ACCEPTOR CONCENTRATION IN GAAS-GA1-XALXAS LASERS
HWANG, CJ
DYMENT, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3240 - 3244
[5] LOW-FREQUENCY NOISE CHARACTERISTICS OF CHANNEL SUBSTRATE PLANAR GAAIAS LASER-DIODES
MILES, RO
DANDRIDGE, A
TVETEN, AB
GIALLORENZI, TG
TAYLOR, HF
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 848 - 850
[6] MOORADIAN A, 1981, 5TH INT C LAS SPECTR
[7] INJECTED-CARRIER INDUCED REFRACTIVE-INDEX CHANGE IN SEMICONDUCTOR-LASERS
OLSSON, A
TANG, CL
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (01) : 24 - 26
[8] EFFECT OF INJECTION CURRENT ON THE DIELECTRIC-CONSTANT OF AN INBUILT WAVEGUIDE IN TWIN-TRANSVERSE-JUNCTION STRIPE LASERS
TURLEY, SEH
THOMPSON, GHB
LOVELACE, DF
[J]. ELECTRONICS LETTERS, 1979, 15 (09) : 256 - 257
[9] WELFORD D, UNPUB