DETERMINATION OF BREAKDOWN RATES AND DEFECT DENSITIES IN SIO2

被引：17

作者：

SHATZKES, M

AVRON, M

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(82)90111-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：217 / 230

页数：14

共 26 条

[1]

Anolick E. S., 1979, 17th Annual Proceedings Reliability Physics, P8, DOI 10.1109/IRPS.1979.362864

[2]

ANOLICK ES, 1981, 19TH ANN P INT REL P, P23

[3] ELECTRON-TUNNELING AT AL-SIO2 INTERFACES [J].

AVRON, M ;

SHATZKES, M ;

DISTEFANO, TH ;

GDULA, RA .

[4]

BERMAN A, 1981, 1981 P INT REL PHYS, P24

[5]

Bharucha-Reid AL, 1960, ELEMENTS THEORY MARK

[6]

Crook D. L., 1979, 17th Annual Proceedings Reliability Physics, P1, DOI 10.1109/IRPS.1979.362863

[7] DIELECTRIC INSTABILITY AND BREAKDOWN IN SIO2 THIN-FILMS [J].

DISTEFANO, TH ;

SHATZKES, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :50-54

[8]

DISTEFANO TH, 1975, 3RD P INT S SIL MAT, V77, P332

[9]

DISTEFANO TH, 1974, APPL PHYS LETT, V25, P684

[10] HIGH-FIELD ELECTRONIC PROPERTIES OF SIO2 [J].

HUGHES, RC .