FRENKEL PAIRS IN SILICON AND GERMANIUM

被引:17
作者
EMTSEV, VV
MASHOVETS, TV
MIKHNOVICH, VV
VITOVSKII, NA
机构
来源
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1989年 / 112卷 / 1-2期
关键词
D O I
10.1080/10420158908212986
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
引用
收藏
页码:99 / 118
页数:20
相关论文
共 52 条
[1]  
ABDUSATTAROV AG, 1986, PISMA ZH TEKH FIZ+, V12, P1461
[2]   THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].
BARAFF, GA ;
KANE, EO ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686
[3]   SILICON SELF-INTERSTITIAL MIGRATION - MULTIPLE PATHS AND CHARGE STATES [J].
BARYAM, Y ;
JOANNOPOULOS, JD .
PHYSICAL REVIEW B, 1984, 30 (04) :2216-2218
[4]   BEHAVIOUR OF PRIMARY DEFECTS IN ELECTRON-IRRADIATED GERMANIUM [J].
BOURGOIN, J ;
MOLLOT, F .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1971, 43 (01) :343-&
[5]   NEW MECHANISM FOR INTERSTITIAL MIGRATION [J].
BOURGOIN, JC ;
CORBETT, JW .
PHYSICS LETTERS A, 1972, A 38 (02) :135-&
[6]  
BOURGOIN JC, 1981, C SER I PHYSICS, V59, P33
[7]   IRRADIATION DAMAGE IN N-TYPE GERMANIUM AT 4.2 DEGREES K [J].
CALLCOTT, TA ;
MACKAY, JW .
PHYSICAL REVIEW, 1967, 161 (03) :698-+
[8]   MICROSCOPIC THEORY OF ATOMIC DIFFUSION MECHANISMS IN SILICON [J].
CAR, R ;
KELLY, PJ ;
OSHIYAMA, A ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1984, 52 (20) :1814-1817
[9]  
DABAGYAN AV, 1988, THESIS AF IOFF PHYS
[10]  
DABAGYAN AV, 1988, FIZ TEKH POLUPROV, V22, P747