LARGE ANISOTROPY IN THE OPTICAL REFLECTANCE OF AG(110) SINGLE-CRYSTALS - EXPERIMENT AND THEORY

被引：71

作者：

BORENSZTEIN, Y

MOCHAN, WL

TARRIBA, J

BARRERA, RG

TADJEDDINE, A

机构：

[1] UNIV NACL AUTONOMA MEXICO, INST FIS, CUERNAVACA LAB, CUERNAVACA 62191, MEXICO

[2] UNIV NACL AUTONOMA MEXICO, INST FIS, MEXICO CITY 01000, DF, MEXICO

[3] CNRS, ELECTROCHIM INTERFACES LAB, F-92195 MEUDON, FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1993年 / 71卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.71.2334

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first observation of a large (more than 10%) reflectance anisotropy on a Ag(110) single crystal. We reproduce the experimental data fairly well by use of a theoretical model, based on the quasistatic approximation, which takes into account both the actual geometry of the crystal surface and the interband and intraband transitions. This demonstrates that the main effect is the screened surface local-field effect on resonant dipolar oscillations localized near the surface.

引用

页码：2334 / 2337

页数：4

共 37 条

[1] A REFLECTANCE ANISOTROPY SPECTROMETER FOR REAL-TIME MEASUREMENTS
ACHER, O
DREVILLON, B
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1992, 63 (11) : 5332 - 5339
[2] KINETIC LIMITS OF MONOLAYER GROWTH ON (001) GAAS BY ORGANOMETALLIC CHEMICAL-VAPOR DEPOSITION
ASPNES, DE
COLAS, E
STUDNA, AA
BHAT, R
KOZA, MA
KERAMIDAS, VG
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (24) : 2782 - 2785
[3] ANISOTROPIES IN THE ABOVE BAND-GAP OPTICAL-SPECTRA OF CUBIC SEMICONDUCTORS
ASPNES, DE
STUDNA, AA
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (17) : 1956 - 1959
[4] OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001)
ASPNES, DE
HARBISON, JP
STUDNA, AA
FLOREZ, LT
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (15) : 1687 - 1690
[5] FERMI-LEVEL MOVEMENT AT GAAS(001) SURFACES PASSIVATED WITH SODIUM SULFIDE SOLUTIONS
BERKOVITS, VL
BESSOLOV, VN
LVOVA, TN
NOVIKOV, EB
SAFAROV, VI
KHASIEVA, RV
TSARENKOV, BV
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) : 3707 - 3711
[6] DIFFERENTIAL REFLECTIVITY OF SI(111)2X1 SURFACE WITH POLARIZED-LIGHT - A TEST FOR SURFACE-STRUCTURE
CHIARADIA, P
CRICENTI, A
SELCI, S
CHIAROTTI, G
[J]. PHYSICAL REVIEW LETTERS, 1984, 52 (13) : 1145 - 1147
[7] REFLECTANCE-DIFFERENCE STUDIES OF ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION GROWTH TRANSIENTS ON (001) GAAS
COLAS, E
ASPNES, DE
BHAT, R
STUDNA, AA
KOZA, MA
KERAMIDAS, VG
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 94 (03) : 613 - 618
[8] LOCAL-FIELD EFFECTS ON THE REFLECTANCE ANISOTROPY OF SI(110)-H
DELSOLE, R
MOCHAN, WL
BARRERA, RG
[J]. PHYSICAL REVIEW B, 1991, 43 (03): : 2136 - 2140
[9] INTERNAL FIELD IN GENERAL DIPOLE LATTICES
DEWETTE, FW
SCHACHER, GE
[J]. PHYSICAL REVIEW, 1965, 137 (1A): : A78 - &
[10] INVESTIGATION OF OPTICAL PROPERTIES OF AG BY MEANS OF THIN SEMI-TRANSPARENT FILMS
DUJARDIN, MM
THEYE, ML
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (09) : 2033 - &

← 1 2 3 4 →