A UHV-COMPATIBLE ROUND WAFER HEATER FOR SILICON MOLECULAR-BEAM EPITAXY

[1] METHODS FOR DEFECT EVALUATION OF THIN (100) ORIENTED SILICON EPITAXIAL LAYERS USING A WET CHEMICAL ETCH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2074 - 2076

[2] Bean J. C., 1981, Impurity doping processes in silicon, P175

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] FARROW RFC, 1978, THIN SOLID FILMS, V55

[5] SILICON MOLECULAR-BEAM EPITAXY WITH SIMULTANEOUS ION IMPLANT DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1102 - 1110

[1] METHODS FOR DEFECT EVALUATION OF THIN (100) ORIENTED SILICON EPITAXIAL LAYERS USING A WET CHEMICAL ETCH [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2074 - 2076

[2] Bean J. C., 1981, Impurity doping processes in silicon, P175

[3] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[4] FARROW RFC, 1978, THIN SOLID FILMS, V55

[5] SILICON MOLECULAR-BEAM EPITAXY WITH SIMULTANEOUS ION IMPLANT DOPING [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 1102 - 1110