ELECTRICAL-PROPERTIES OF CDTE CRYSTALS GROWN BY VUVG FROM NONSTOICHIOMETRIC CHARGES

被引:13
作者
YELLIN, N [1 ]
ZEMEL, A [1 ]
TENNE, R [1 ]
机构
[1] WEIZMANN INST SCI,IL-76100 REHOVOT,ISRAEL
关键词
D O I
10.1007/BF02656669
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:85 / 94
页数:10
相关论文
共 20 条
[1]   SUBLIMATION GROWTH AND X-RAY TOPOGRAPHIC CHARACTERIZATION OF CDTE SINGLE-CRYSTALS [J].
BUCK, P ;
NITSCHE, R .
JOURNAL OF CRYSTAL GROWTH, 1980, 48 (01) :29-33
[2]  
de Nobel D., 1959, PHILIPS RES REPORTS, V14, P361
[3]  
DENOBEL D, 1959, PHILIPS RES REP, V14, P431
[4]   GROWTH OF SEMI-INSULATING CADMIUM TELLURIDE [J].
KYLE, NR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1790-&
[5]   MELT-GROWTH AND CHARACTERIZATION OF CADMIUM TELLURIDE [J].
MULLIN, JB ;
STRAUGHAN, BW .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :105-115
[6]   CRYSTAL-GROWTH AND CHARACTERIZATION OF CADMIUM TELLURIDE - A MODIFIED SOLVENT EVAPORATION TECHNIQUE [J].
MULLIN, JB ;
JONES, CA ;
STRAUGHAN, BW ;
ROYLE, A .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :135-142
[7]   GROWTH OF CDTE SINGLE-CRYSTALS [J].
MURANEVICH, A ;
ROITBERG, M ;
FINKMAN, E .
JOURNAL OF CRYSTAL GROWTH, 1983, 64 (02) :285-290
[8]   PROPERTIES OF CDTE-TE ALLOY-FILMS PREPARED USING MOLECULAR-BEAMS [J].
MYERS, TH ;
WALTNER, AW ;
SCHETZINA, JF .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5697-5702
[9]   STRUCTURE AND PROPERTIES OF SPUTTER-DEPOSITED CDTE [J].
PAWLEWICZ, WT ;
ALLEN, RP ;
BARRUS, HG ;
LAEGREID, N .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :417-422
[10]   GROWTH BY TRAVELING HEATER METHOD AND CHARACTERISTIC OF UNDOPED HIGH-RESISTIVITY CDTE [J].
TAGUCHI, T ;
SHIRAFUJI, J ;
INUISHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (08) :1331-1342