THE GROWTH OF GAAS, ALGAAS, INP AND INGAAS BY CHEMICAL BEAM EPITAXY USING GROUP-III AND GROUP-V ALKYLS

被引：36

作者：

TSANG, WT

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1986年 / 15卷 / 04期

关键词：

D O I：

10.1007/BF02659637

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：235 / 245

页数：11

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