ORIENTED GROWTH OF ULTRATHIN TUNGSTEN FILMS ON SAPPHIRE SUBSTRATES

被引：18

作者：

SOUK, JH

SEGMULLER, A

ANGILELLO, J

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 02期

关键词：

D O I：

10.1063/1.339775

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：509 / 512

页数：4

共 14 条

[1]

[Anonymous], [No title captured]

[2]

BARRET CS, 1964, STRUCTURE METALS

[3] ELECTRON-BEAM EVAPORATION OF ORIENTED NB FILMS ONTO GAAS CRYSTALS IN ULTRAHIGH-VACUUM [J].

EIZENBERG, M ;

SMITH, DA ;

HEIBLUM, M ;

SEGMULLER, A .

APPLIED PHYSICS LETTERS, 1986, 49 (07) :422-424

[4] X-RAY TOTAL-EXTERNAL-REFLECTION-BRAGG DIFFRACTION - STRUCTURAL STUDY OF THE GAAS-AL INTERFACE [J].

MARRA, WC ;

EISENBERGER, P ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :6927-6933

[5] ORIENTATION RELATIONSHIPS IN HETEROEPITAXIAL TUNGSTEN-ON-SAPPHIRE SYSTEM [J].

MILLER, A ;

MANASEVIT, HM ;

FORBES, DH ;

CADOFF, IB .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2921-+

[6]

NOLDER R, 1965, T METALL SOC AIME, V233, P549

[7] HIGH-RESOLUTION X-RAY-DIFFRACTION FROM SMALL NUMBERS OF LANGMUIR-BLODGETT LAYERS OF MANGANESE STEARATE [J].

POMERANTZ, M ;

SEGMULLER, A .

THIN SOLID FILMS, 1980, 68 (01) :33-45

[8] OBSERVATION OF X-RAY INTERFERENCES ON THIN-FILMS OF AMORPHOUS SILICON [J].

SEGMULLER, A .

THIN SOLID FILMS, 1973, 18 (02) :287-294

[9] X-RAY-DIFFRACTION STUDY OF A ONE-DIMENSIONAL GAAS-ALAS SUPERLATTICE [J].

SEGMULLER, A ;

KRISHNA, P ;

ESAKI, L .

JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1977, 10 (FEB1) :1-6

[10]

SEGMULLER A, 1979, AIP C P, V53, P78

← 1 2 →