SIMULATION AND GROWTH-RATE UNIFORMITY OF MOVPE INP USING ADDUCTS

被引：8

作者：

FIELD, RJ ^{[1
]}

SCHOLZ, F ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 88卷 / 03期

关键词：

Experimental growth and measurements were carried out at the Universitat Stuttgart. We thank G. Laube; U; Nerz; P. Wiedemann and K. Streu-bel for their experimental assistance. Computer simulations were carried out at the ITT Advanced Technology Center and at Yale University. We thank B. Alphenaar for programming assistance;

D O I：

10.1016/0022-0248(88)90010-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：371 / 378

页数：8

共 25 条

[21] A NEW APPROACH TO MOCVD OF INDIUM-PHOSPHIDE AND GALLIUM-INDIUM ARSENIDE
MOSS, RH
EVANS, JS
[J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 129 - 134
[22] ADDUCTS IN THE GROWTH OF III-V-COMPOUNDS
MOSS, RH
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 78 - 87
[23] INP, GAINAS AND QUANTUM-WELL STRUCTURES GROWN BY ADDUCT MOVPE
SCHOLZ, F
WIEDEMANN, P
NERZ, U
BENZ, KW
TRANKLE, G
LACH, E
FORCHEL, A
LAUBE, G
WEIDLEIN, J
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 564 - 570
[24] APPLICATION OF FINITE ELEMENT METHOD TO MASS TRANSPORT LIMITED EPITAXIAL GROWTH PROCESSES
SECREST, BG
BOYD, WW
SHAW, DW
[J]. JOURNAL OF CRYSTAL GROWTH, 1971, 10 (03) : 251 - &
[25] GAS-PHASE DEPLETION AND FLOW DYNAMICS IN HORIZONTAL MOCVD REACTORS
VANDEVEN, J
RUTTEN, GMJ
RAAIJMAKERS, MJ
GILING, LJ
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 76 (02) : 352 - 372

← 1 2 3 →