MORPHOLOGICAL EFFECT OF A CLEAN SI SURFACE ON NH3 DISSOCIATIVE ADSORPTION

被引:16
作者
CHERIF, SM
LACHARME, JP
SEBENNE, CA
机构
[1] Laboratoire de Physique des Solides, associé au CNRS No. 154, Université Pierre et Marie Curie, 75252 Paris Cedex 05
关键词
D O I
10.1016/0169-4332(92)90337-W
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The interaction of NH3 in the 10(-2)-10(2) langmuir exposure range with different Si surfaces, namely (111) 2 x 1 and 7 x 7 reconstructed as well as (100) 2 x 1 either stepped or not, is compared. Upon saturation, characterized by a removal of the surface dangling bonds (DB) and a net decrease of the ionization energy, Si(111) 7 x 7 differs from other surfaces in saturating at one NH3 molecule per 2 DB against 4 for the others. The various results are explained within a common picture where the NH3 molecule dissociates into one NH2 radical and one hydrogen atom, each species being able to remove 2 DB, if they are close enough.
引用
收藏
页码:777 / 781
页数:5
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