EPITAXIAL GROWTH OF SILICON AND GERMANIUM (I)

[1] ALBERT D, 1960, ADVANCES VACUUM SCIE, P31

[2] P-LAYERS ON VACUUM HEATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 979 - 985

[3] CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1563 - 1571

[4] TEMPERATURE DEPENDENCE OF EJECTION PATTERNS IN GE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3492 - &

[5] ANDERSON RL, 1952, STATISTICAL THEORY R

[6] BANCROFT GH, 1963, AMER VACUUM SOC T ED, P440

[7] BANCROFT GH, 1962, AMER VACUUM SOC T ED, P111

[8] BANCROFT GH, 1962, AMER VACUUM SOC T ED, P21

[9] BANCROFT GH, 1962, AMER VACUUM SOC T ED, P14

[10] BANCROFT GH, 1963, AMER VACUUM SOC T ED, P316

[1] ALBERT D, 1960, ADVANCES VACUUM SCIE, P31

[2] P-LAYERS ON VACUUM HEATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (06) : 979 - 985

[3] CLEANING OF SILICON SURFACES BY HEATING IN HIGH VACUUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (10) : 1563 - 1571

[4] TEMPERATURE DEPENDENCE OF EJECTION PATTERNS IN GE SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3492 - &

[5] ANDERSON RL, 1952, STATISTICAL THEORY R

[6] BANCROFT GH, 1963, AMER VACUUM SOC T ED, P440

[7] BANCROFT GH, 1962, AMER VACUUM SOC T ED, P111

[8] BANCROFT GH, 1962, AMER VACUUM SOC T ED, P21

[9] BANCROFT GH, 1962, AMER VACUUM SOC T ED, P14

[10] BANCROFT GH, 1963, AMER VACUUM SOC T ED, P316