LOW-TEMPERATURE TRANSPORT-PROPERTIES OF CD0.91MN0.09TE-IN AND EVIDENCE FOR A MAGNETIC HARD GAP IN THE DENSITY OF STATES

被引：76

作者：

TERRY, I ^{[1
]}

PENNEY, T ^{[1
]}

VONMOLNAR, S ^{[1
]}

机构：

[1] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.69.1800

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A family of resistivity curves, with different carrier concentrations, is obtained in a single sample of the dilute magnetic persistent photoconductor Cd0.91Mn0.09Te:In. These curves exhibit a crossover from an exp(T0/T)1/2 form for variable-range hopping with interactions to an exp(E(H)/T) form, upon reducing temperature. All data scale onto a single curve. The energy E(H) is associated with a hard gap in the density of states which is magnetic in origin. The localization length is found to have the same critical behavior as the dielectric constant, on approaching the insulator-metal transition.

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页码：1800 / 1803

页数：4

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