CONDUCTION BAND MINIMA OF GA(AS1MINUSXPX)

被引:49
作者
SPITZER, WG
MEAD, CA
机构
来源
PHYSICAL REVIEW A-GENERAL PHYSICS | 1964年 / 133卷 / 3A期
关键词
D O I
10.1103/PhysRev.133.A872
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:A872 / &
相关论文
共 31 条
[11]   LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J].
GERSHENZON, M ;
MIKULYAK, RM .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :313-&
[12]  
HILSUM C, 1961, SEMICONDUCTING 3-5 C, P182
[13]   OPTICAL ABSORPTION EDGE OF GALLIUM ARSENIDE [J].
HOBDEN, MV ;
STURGE, MD .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1961, 78 (502) :615-&
[14]   CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J].
KAHNG, D .
SOLID-STATE ELECTRONICS, 1963, 6 (03) :281-295
[15]   INFRARED LATTICE ABSORPTION OF GAP [J].
KLEINMAN, DA ;
SPITZER, WG .
PHYSICAL REVIEW, 1960, 118 (01) :110-117
[16]   ABSORPTION EDGE IN DEGENERATE PARA TYPE GAAS [J].
KUDMAN, I ;
SEIDEL, T .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (03) :771-&
[17]   OBSERVATION OF SOLID-STATE PHOTOEMISSION FROM TIN INTO GERMANIUM [J].
MAHLMAN, GW .
PHYSICAL REVIEW LETTERS, 1961, 7 (11) :408-&
[18]   PHOTOEMISSION FROM AU AND CU INTO CDS [J].
MEAD, CA ;
SPITZER, WG .
APPLIED PHYSICS LETTERS, 1963, 2 (04) :74-75
[19]   OPTICAL ABSORPTION EDGE IN GAAS AND ITS DEPENDENCE ON ELECTRIC FIELD [J].
MOSS, TS .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2136-&
[20]  
MOSS TS, 1962, REPORT INTERNATIONAL, P295