SIMULTANEOUS COADSORPTION OF CS AND O2 ON SI(100)2 X 1 SURFACES

被引:8
作者
KAMARATOS, M
PAPAGEORGOPOULOS, CA
机构
关键词
D O I
10.1016/0039-6028(89)90215-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:317 / 326
页数:10
相关论文
共 21 条
[1]   INTERACTION OF OXYGEN WITH SILICON D-METAL INTERFACES - A PHOTOEMISSION INVESTIGATION [J].
ABBATI, I ;
ROSSI, G ;
CALLIARI, L ;
BRAICOVICH, L ;
LINDAU, I ;
SPICER, WE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :409-412
[2]   MECHANISM OF ALKALI-PROMOTED OXIDATION OF SILICON [J].
ASENSIO, MC ;
MICHEL, EG ;
OELLIG, EM ;
MIRANDA, R .
APPLIED PHYSICS LETTERS, 1987, 51 (21) :1714-1716
[3]   DESORPTION OF THE CATALYST AGENT AFTER CATALYTIC-OXIDATION OF SEMICONDUCTORS [J].
BAKSHI, MH ;
SOUKIASSIAN, P ;
GENTLE, TM ;
HURYCH, Z .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1425-1427
[4]   GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J].
BREWS, JR ;
FICHTNER, W ;
NICOLLIAN, EH ;
SZE, SM .
ELECTRON DEVICE LETTERS, 1980, 1 (01) :2-4
[5]   CATALYTIC ACTION OF GOLD ATOMS ON THE OXIDATION OF SI(111) SURFACES [J].
CROS, A ;
DERRIEN, J ;
SALVAN, F .
SURFACE SCIENCE, 1981, 110 (02) :471-490
[6]   SIO2 ULTRA THIN-FILM GROWTH-KINETICS AS INVESTIGATED BY SURFACE TECHNIQUES [J].
DERRIEN, J ;
COMMANDRE, M .
SURFACE SCIENCE, 1982, 118 (1-2) :32-46
[7]   ELECTRONIC PROMOTERS AND SEMICONDUCTOR OXIDATION - ALKALI-METALS ON SI(111) SURFACES [J].
FRANCIOSI, A ;
SOUKIASSIAN, P ;
PHILIP, P ;
CHANG, S ;
WALL, A ;
RAISANEN, A ;
TROULLIER, N .
PHYSICAL REVIEW B, 1987, 35 (02) :910-913
[8]   ENHANCEMENT OF SI OXIDATION BY CERIUM OVERLAYERS AND FORMATION OF CERIUM SILICATE [J].
HILLEBRECHT, FU ;
RONAY, M ;
RIEGER, D ;
HIMPSEL, FJ .
PHYSICAL REVIEW B, 1986, 34 (08) :5377-5380
[9]   PROBING THE TRANSITION LAYER AT THE SIO2-SI INTERFACE USING CORE LEVEL PHOTOEMISSION [J].
HOLLINGER, G ;
HIMPSEL, FJ .
APPLIED PHYSICS LETTERS, 1984, 44 (01) :93-95
[10]  
KAMARATOS M, IN PRESS J PHYS COND