ANNEALING EFFECTS ON HEAVILY CARBON-DOPED GAAS

被引：30

作者：

HAN, WY

LU, Y

LEE, HS

COLE, MW

SCHAUER, SN

MOERKIRK, RP

JONES, KA

YANG, LW

机构：

[1] USA,ELECTR TECHNOL & DEVICE LAB,FT MONMOUTH,NJ 07703

[2] FORD MICROELECTR INC,COLORADO SPRINGS,CO 80921

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.107622

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hole concentrations and lattice mismatch with the GaAs substrate of heavily carbon-doped epilayers (4.7x10(19) and 9.8x10(19) cm-3) were increased and the mobilities were decreased as compared with the as-grown samples by rapid thermal annealing silicon nitride capped samples at temperatures from 500 to 900-degrees-C. However, for the more heavily doped sample, the hole concentration, mobility, and lattice mismatch decreased with increasing annealing temperature for annealing temperatures higher than 700-degrees-C, but the hole concentration and lattice mismatch were still larger than those of the as-grown samples. Secondary ion mass spectroscopy results showed that annealing produced no change in the C concentration or distribution, but the hydrogen concentration decreased. Cross-sectional transmission electron microscopy indicated that no mismatch dislocations formed at the interface.

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页码：87 / 89

页数：3

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