MEASUREMENTS ON THE ELECTRICAL TRANSPORT-PROPERTIES IN COSI2 AND NISI2 FORMED BY THIN-FILM REACTIONS

Electrical resistivity and Hall effect measurement on thin CoSi//2 and NiSi//2 films were carried out in the temperature range 1. 5-300 K and in magnetic fields up to 10 T. Metal-like conduction in CoSi//2 is inferred from the low residual resistivity and from the temperature dependence of the resistivity which follows Matthiessen's rule. The Hall constant R//H deviates from the ideal metallic behavior suggesting the presence of two carrier types of opposite sign, holes being the predominant species. In NiSi//2 a change in the sign of the Hall constant at 110-220 K suggests that a reversal of the predominant carrier type from holes to electrons takes place. This anomalous behavior of NiSi//2 requires further exploration.