TRANSPORT STUDY OF SELF-SUPPORTING POROUS SILICON

被引：26

作者：

FEJFAR, A

PELANT, I

SIPEK, E

KOCKA, J

JUSKA, G

MATSUMOTO, T

KANEMITSU, Y

机构：

[1] NIPPON STEEL CORP LTD, ELECTR RES LABS, SAGAMIHARA, KANAGAWA 229, JAPAN

[2] UNIV TSUKUBA, INST PHYS, TSUKUBA, IBARAKI 305, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 09期

关键词：

D O I：

10.1063/1.113584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured dark DC conductivity and time-of-flight (TOF) of carriers in self-supporting porous silicon films in the temperature range 298-480 K. The dark I-V curves show superlinear behavior with activation energies of 0.38-0.67 eV. The TOF measurements allowed us to evaluate the drift-length of non-equilibrium carriers and revealed a significant decrease of the collected charge with increasing delay (tdel≥1 ms) of the exciting 3 ns laser pulse after the voltage application, probably due to field redistribution in the Si crystallites.© 1995 American Institute of Physics.

引用

页码：1098 / 1100

页数：3

共 17 条

[1] ADSORBATE EFFECTS ON PHOTOLUMINESCENCE AND ELECTRICAL-CONDUCTIVITY OF POROUS SILICON [J].