SILICON-DOPED GALLIUM-ARSENIDE ANTIMONIDE ELECTROLUMINESCENT DIODES EMITTING TO 1.06 MU-M

被引：13

作者：

BRIERLEY, SK

FONSTAD, CG

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

[2] MIT,DEPT ELECT ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 08期

关键词：

D O I：

10.1063/1.322099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3678 / 3680

页数：3

共 10 条

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[7] ELECTROLUMINESCENCE CHARACTERISTICS AND EFFICIENCY OF GAAS-SI DIODES [J].

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[8]

MAUER RD, 1973, P IEEE, V61, P452

[9] EFFICIENT LPE-GROWN INXGA1-XAS LEDS AT 1-1.1-MUM WAVELENGTHS [J].

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[10]

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