EVALUATION OF REACTION-KINETICS IN PLANAR COUPLES

被引:4
作者
DYBKOV, VI
机构
[1] Institut Problem Materialoznavstva, Kiev
关键词
D O I
10.1007/BF00721615
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
[No abstract available]
引用
收藏
页码:1459 / 1462
页数:4
相关论文
共 11 条
[2]  
DYBKOV VI, 1986, J MATER SCI, V21, P3078, DOI 10.1007/BF00553339
[3]  
HANSEN M, 1962, CONSTITUTION BINARY, V1, P147
[4]   KINETICS OF SILICIDE FORMATION BY THIN-FILMS OF V ON SI AND SIO2 SUBSTRATES [J].
KRAUTLE, H ;
NICOLET, MA ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (08) :3304-3308
[5]   MICROSTRUCTURE AND GROWTH-KINETICS OF CRSI2 ON SI(100) STUDIED USING CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY [J].
NATAN, M ;
DUNCAN, SW .
THIN SOLID FILMS, 1985, 123 (01) :69-85
[6]  
PINES BY, 1961, OCHERKI METALLOFIZIK, pCH4
[7]  
PINES BY, 1959, FIZ TVERD TELA, V1, P946
[8]   KINETICS OF INTERFACIAL REACTION IN BIMETALLIC CU-SN THIN-FILMS [J].
TU, KN ;
THOMPSON, RD .
ACTA METALLURGICA, 1982, 30 (05) :947-952
[9]  
TU KN, 1978, THIN FILMS INTERDIFF, pCH10
[10]  
van Loo F.J.J., 1979, SCI SINTER, V11, P9