STARK-EFFECT AND EXCITONIC TUNNELING ESCAPE PROCESS IN SEMICONDUCTOR QUANTUM-WELLS

被引：5

作者：

HERNANDEZCABRERA, A

ACEITUNO, P

CRUZ, H

机构：

[1] Departamento de Física Fundamental y Experimental, Universidad de La Laguna, 38204 La Laguna, Tenerife

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 09期

关键词：

D O I：

10.1063/1.357208

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we have numerically integrated in space and time the effective mass Schrodinger equation for an exciton in a semiconductor quantum-well structure. Considering a Coulomb interaction between the electron-hole pair and an external electric field, we have studied the excitonic tunneling escape process from semiconductor quantum wells. Our method of calculation has been applied to types-I, -II, and -III quantum-well superlattices. In addition, we present the calculated excitonic lifetimes for the GaAs/GalAs, InAs/GaSb, and HgTe/HgCdTe systems under an external electric field. In the HgTe/CdTe system, the possibility of having similar electron and hole lifetime values is also found if the applied electric field is large enough.

引用

页码：4983 / 4988

页数：6

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