STARK-EFFECT AND EXCITONIC TUNNELING ESCAPE PROCESS IN SEMICONDUCTOR QUANTUM-WELLS

被引:5
作者
HERNANDEZCABRERA, A
ACEITUNO, P
CRUZ, H
机构
[1] Departamento de Física Fundamental y Experimental, Universidad de La Laguna, 38204 La Laguna, Tenerife
关键词
D O I
10.1063/1.357208
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, we have numerically integrated in space and time the effective mass Schrodinger equation for an exciton in a semiconductor quantum-well structure. Considering a Coulomb interaction between the electron-hole pair and an external electric field, we have studied the excitonic tunneling escape process from semiconductor quantum wells. Our method of calculation has been applied to types-I, -II, and -III quantum-well superlattices. In addition, we present the calculated excitonic lifetimes for the GaAs/GalAs, InAs/GaSb, and HgTe/HgCdTe systems under an external electric field. In the HgTe/CdTe system, the possibility of having similar electron and hole lifetime values is also found if the applied electric field is large enough.
引用
收藏
页码:4983 / 4988
页数:6
相关论文
共 24 条
[21]   TUNNELING ESCAPE TIME OF ELECTRONS FROM A QUANTUM WELL UNDER THE INFLUENCE OF AN ELECTRIC-FIELD [J].
NORRIS, TB ;
SONG, XJ ;
SCHAFF, WJ ;
EASTMAN, LF ;
WICKS, G ;
MOUROU, GA .
APPLIED PHYSICS LETTERS, 1989, 54 (01) :60-62
[22]   TUNNELING IN A FINITE SUPERLATTICE [J].
TSU, R ;
ESAKI, L .
APPLIED PHYSICS LETTERS, 1973, 22 (11) :562-564
[23]   INTERFACE EXCITONS IN STAGGERED-LINE-UP QUANTUM-WELLS - THE ALAS/GAAS CASE [J].
ZIMMERMANN, R ;
BIMBERG, D .
PHYSICAL REVIEW B, 1993, 47 (23) :15789-15793
[24]  
ZIMMERMANN R, 1993, J PHYS-PARIS, V4, P261