MEASUREMENT OF THE RESISTIVITY OF EPITAXIAL VAPOR GROWN FILMS OF SILICON BY AN INFRARED TECHNIQUE

被引：14

作者：

RAWLINS, TGR

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1964年 / 111卷 / 07期

关键词：

D O I：

10.1149/1.2426258

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：810 / 814

页数：5

共 15 条

[1] THICKNESS MEASUREMENT OF EPITAXIAL FILMS BY THE INFRARED INTERFERENCE METHOD [J].

ALBERT, MP ;

COMBS, JF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (08) :709-713

[2]

AVERY DG, 1952, P PHYS SOC, VB 65, P425

[3]

BORN M, 1959, PRINCIPLES OPTICS, P38

[4]

CULSHAW W, 1954, P PHYS SOC B, V66, P859

[5] ATTENUATED TOTAL REFLECTION - A NEW PRINCIPLE FOR THE PRODUCTION OF USEFUL INFRA-RED REFLECTION SPECTRA OF ORGANIC COMPOUNDS [J].

FAHRENFORT, J .

SPECTROCHIMICA ACTA, 1961, 17 (07) :698-+

[6] ON THE DETERMINATION OF OPTICAL CONSTANTS IN THE INFRARED BY ATTENUATED TOTAL REFLECTION [J].

FAHRENFORT, J ;

VISSER, WM .

SPECTROCHIMICA ACTA, 1962, 18 (09) :1103-&

[7] COMPARISON OF RESISTIVITY MEASUREMENT TECHNIQUES ON EPITAXIAL SILICON [J].

GARDNER, EE ;

HALLENBACK, JF ;

SCHUMANN, PA .

SOLID-STATE ELECTRONICS, 1963, 6 (03) :311-313

[8]

RAWLINS TGR, 1962, 9TH OTT S APPL SPECT

[9]

RAWLINS TGR, UNPUB

[10] INFRARED REFRACTIVE INDEXES OF SILICON GERMANIUM AND MODIFIED SELENIUM GLASS [J].

SALZBERG, CD ;

VILLA, JJ .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1957, 47 (03) :244-246

← 1 2 →