PREPARATION OF NITRIDES BY ACTIVE NITROGEN .2. SI3N4

[1] ANDRUSHUK A, 1969, Patent No. 3424661

[2] ARIZUMI T, 1970, P INT C PHYSICS CHEM, pV7

[3] Duffy M. T., 1970, RCA Review, V31, P742

[4] PROPERTIES OF AMMONIA-FREE NITROGEN-SI3N4 FILMS PRODUCED AT LOW-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) : 1248 - &

[5] Gregor L. V., 1969, Thin film dielectrics, P447

[6] HARSLEY AW, 1969, ELECTRONICS, V42, P84

[7] DISSOCIATION OF N2 IN 2450 MHZ DISCHARGES [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (08): : 1079 - +

[8] JOYCE RJ, 1967, THIN SOLID FILMS, V1, P481

[9] KELLY KK, 1960, 584 US BUR MIN B

[10] Kubaschewski O., 1967, METALLURGICAL THERMO

[1] ANDRUSHUK A, 1969, Patent No. 3424661

[2] ARIZUMI T, 1970, P INT C PHYSICS CHEM, pV7

[3] Duffy M. T., 1970, RCA Review, V31, P742

[4] PROPERTIES OF AMMONIA-FREE NITROGEN-SI3N4 FILMS PRODUCED AT LOW-TEMPERATURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (09) : 1248 - &

[5] Gregor L. V., 1969, Thin film dielectrics, P447

[6] HARSLEY AW, 1969, ELECTRONICS, V42, P84

[7] DISSOCIATION OF N2 IN 2450 MHZ DISCHARGES [J]. BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (08): : 1079 - +

[8] JOYCE RJ, 1967, THIN SOLID FILMS, V1, P481

[9] KELLY KK, 1960, 584 US BUR MIN B

[10] Kubaschewski O., 1967, METALLURGICAL THERMO