URBACH EDGES AND ANGULAR DISTORTIONS IN A-SI-H AND RELATED ALLOYS

被引:11
作者
BUSTARRET, E [1 ]
机构
[1] UNIV JOSEPH FOURIER,LEPES,CNRS,F-38042 GRENOBLE,FRANCE
关键词
Semiconducting Germanium Compounds - Amorphous - Semiconducting Silicon Compounds - Amorphous - Silicon and Alloys - Hydrogenation;
D O I
10.1016/0022-3093(89)90054-9
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A general discussion is proposed on the experimental correlation between the valence band tail slope parameter kBTv and the rms deviation ΔΘb of the Si-Si bond angle distribution which has been observed by various authors in doped and undoped a-Si:H, as well as in a-SiGe:H and a-SiN:H alloys. In the simplified case of a Gaussian distribution of bond angle values with a single harmonic bending potential, an exponential distribution is expected for the elastic energy fluctuations, with a decay parameter scaling with ΔΘb2. For Si-centered tetrahedra with at least two Si nearest neighbors, the Keating formalism yields realistic estimates of the elastic potential site-to-site fluctuations along the Si-Si skeleton of Si-based alloys.
引用
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页码:13 / 15
页数:3
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