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INCORPORATION OF DOPANTS INTO EPITAXIAL CVD-SILICON LAYERS AND INCORPORATION EQUILIBRIUM

被引：9
作者：
KUHNE, H
机构：
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1982年 / 17卷 / 11期
关键词：
D O I：
10.1002/crat.2170171109
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：1379 / 1387
页数：9
相关论文
共 17 条
[1]   INCORPORATION OF PHOSPHORUS IN SILICON EPITAXIAL LAYER GROWTH [J].
BLOEM, J ;
GILING, LJ ;
GRAEF, MWM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (10) :1354-1357
[2]  
Bloem J., 1972, Journal of Crystal Growth, V13-14, P302, DOI 10.1016/0022-0248(72)90174-1
[3]  
CAVE EF, 1963, RCA REV, V23, P523
[4]  
DUCHEMIN JP, 1977, REV TECHNIQUE THOMSO, V9, P411
[5]   SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .1. THEORY [J].
HO, CP ;
PLUMMER, JD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) :1516-1522
[6]  
KIRSEJEW PS, 1975, PHYSIK HALBLEITER RU
[7]   TEMPERATURE-DEPENDENCE OF DEGREE OF DOPING IN GROWTH OF SILICON EPITAXIAL LAYERS FROM GAS-PHASE .1. PHOSPHORUS CONTENT AND NATURE OF SEGREGATION COEFFICIENT [J].
KUHNE, H .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (08) :939-946
[8]   DEPENDENCE OF DOPING ELEMENT INCORPORATION ON TEMPERATURE IN THE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON .3. EMPIRICAL INCORPORATION CHARACTERISTIC OF THE SI-P-H SYSTEM [J].
KUHNE, H .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (04) :413-420
[9]   TEMPERATURE-DEPENDENCE OF DEGREE OF DOPING IN GROWTH OF SILICON EPITAXIAL LAYERS FROM GAS-PHASE .2. PHOSPHORUS CONTENT AND VALUES OF DIFFERENTIAL MOLAR SOLUTION ENTHALPIES [J].
KUHNE, H .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1978, 13 (09) :1059-1066
[10]   TEMPERATURE-DEPENDENCE OF DOPING ELEMENT INCORPORATION WITH THE CHEMICAL VAPOR-DEPOSITION OF EPITAXIAL SILICON(IV) - INCORPORATION OF PHOSPHORUS IN THE SI-H-CL-1P SYSTEM [J].
KUHNE, H .
KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (02) :177-183
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