STRUCTURAL-CHANGES IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON DURING LONG-TIME ANNEALING BELOW THE DEPOSITION TEMPERATURE

被引：5

作者：

ASANO, A

STUTZMANN, M

机构：

[1] Max-Planck-Institut F̈r Festkörperforschung, D-7000 Stuttgart 80

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.42.5388

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A large change in the number of Si-H bonds in boron-doped ([B2H6]/[SiH4]=2 vol%) hydrogenated amorphous silicon during low-temperature (220°C) annealing has been observed. The number of Si-H bonds as determined by Raman scattering, infrared spectroscopy, and from the optical gap showed a logarithmic decrease with anneal time to less than half after a 100-h anneal. It is shown that during long-anneal sequences hydrogen is transferred irreversibly from a bonded state into molecular H2 trapped in the samples. This has important implications for the determination of H-diffusion coefficients by nuclear techniques such as secondary-ion mass spectroscopy or elastic-recoil detection analysis. © 1990 The American Physical Society.

引用

页码：5388 / 5390

页数：3

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