HYDROGEN DIFFUSION IN A-SI-H

被引：15

作者：

TANG, XM ^{[1
]}

WEBER, J ^{[1
]}

BAER, Y ^{[1
]}

FINGER, F ^{[1
]}

机构：

[1] UNIV NEUCHATEL,INST MICROTECHN,CH-2000 NEUCHATEL,SWITZERLAND

来源：

SOLID STATE COMMUNICATIONS | 1990年 / 74卷 / 03期

关键词：

D O I：

10.1016/0038-1098(90)91015-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have measured, by ERA, the hydrogen diffusion constant DH at 400°C in five undoped aSi:H/cSi thin films. The deposition temperatures of these films were successively 50, 100, 150, 200 and 250°C so that the corresponding nominal H-concentrations were ranging from 18 to 11 at . % After having annealed the samples, we have measured the H-concentration profiles which allowed us to determine the diffusion constant DH. We have found that the higher the deposition temperature, the larger is DH. We suggest that this behaviour is likely to be attributed to the variation of the cluster concentration in the films. © 1990.

引用

页码：171 / 174

页数：4

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