VARIATIONS OF THE SILICON NETWORK OF AMORPHOUS-SILICON STUDIED BY RAMAN-SPECTROSCOPY

被引:13
作者
HISHIKAWA, Y
WATANABE, K
TSUDA, S
NAKANO, S
OHNISHI, M
KUWANO, Y
机构
关键词
D O I
10.1016/0022-3093(87)90093-7
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:399 / 402
页数:4
相关论文
共 6 条
[1]   RAMAN-STUDY ON THE SILICON NETWORK OF HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED BY A GLOW-DISCHARGE [J].
HISHIKAWA, Y ;
WATANABE, K ;
TSUDA, S ;
OHNISHI, M ;
KUWANO, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (04) :385-389
[2]  
LANNIN JS, 1982, PHYS REV B, V26, P3506, DOI 10.1103/PhysRevB.26.3506
[3]  
SAKATA I, 1985, JPN J APPL PHYS, V24, pL426
[4]   EFFECT OF SUBSTRATE BIAS ON THE PROPERTIES OF MICROCRYSTALLINE SILICON FILMS DEPOSITED IN A GLOW-DISCHARGE [J].
SAROTT, FA ;
IQBAL, Z ;
VEPREK, S .
SOLID STATE COMMUNICATIONS, 1982, 42 (06) :465-468
[5]   ORDER PARAMETERS IN A-SI SYSTEMS [J].
TSU, R ;
GONZALEZHERNANDEZ, J ;
DOEHLER, J ;
OVSHINSKY, SR .
SOLID STATE COMMUNICATIONS, 1983, 46 (01) :79-82
[6]  
TSUDA S, 1985, 18TH P IEEE PVSC LAS, P1925