OPTICAL CARRIER LINEWIDTH BROADENING IN A TRAVELING-WAVE SEMICONDUCTOR-LASER AMPLIFIER

被引：7

作者：

HINTON, K

机构：

[1] Telecom Australia Research Laboratories, Clayton 3168, Victoria

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1990年 / 26卷 / 07期

关键词：

D O I：

10.1109/3.59656

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The power spectral densities of the phase, intensity, and electron density noise, derived in a previous paper [7], are used to calculate the linewidth broadening of an optical carrier as it propagates through a traveling wave semiconductor laser amplifier. It is found that the amount of broadening is dependent upon the input linewidth as well as amplifier parameters. The effect of saturation due to high input power is considered, as well as the operational regime where intensity, rather than phase, noise determines the amplifier output line shape. Finally, an example system calculation is used to demonstrate the impact of amplifier line broadening on system design. © 1990 IEEE

引用

页码：1176 / 1182

页数：7

共 22 条

[1]

Adams M. J., 1985, IEE Proceedings J (Optoelectronics), V132, P58, DOI 10.1049/ip-j.1985.0012

[2]

BOEK J, 1980, AEU, V34, P465

[3] PHASE NOISE AND SPECTRAL-LINE SHAPE IN SEMICONDUCTOR-LASERS [J].