AN ULTRA-HIGH-SPEED GAAS PRESCALER USING A DYNAMIC FREQUENCY-DIVIDER

被引：4

作者：

OSAFUNE, K

OHWADA, K

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1987年 / 35卷 / 01期

关键词：

D O I：

10.1109/TMTT.1987.1133587

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：9 / 13

页数：5

共 11 条

[1] ION-IMPLANTED E/D-TYPE GAAS IC TECHNOLOGY [J].

FURUTSUKA, T ;

TSUJI, T ;

KATANO, F ;

HIGASHISAKA, A ;

KURUMADA, K .

ELECTRONICS LETTERS, 1981, 17 (25-2) :944-945

[2]

HENDEL RH, 1984, DEC IEDM, P857

[3]

LIECHTI CA, 1982, IEEE T ELECTRON DEV, V29, P1094

[4]

NOORDANUS J, 1983, P I ELEC ENG 2, V130

[5]

OHMORI M, 1984, 11TH GAAS REL COMP S

[6]

OSAFUNE K, UNPUB IEEE T MICROWA

[7]

OSAFUNE K, UNPUB HIGH SPEED LOW

[8] GAAS DIGITAL DYNAMIC ICS FOR APPLICATIONS UP TO 10-GHZ [J].

ROCCHI, M ;

GABILLARD, B .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (03) :369-376

[9]

SAITO S, UNPUB IEEE T MICROWA

[10] A MESFET VARIABLE-CAPACITANCE MODEL FOR GAAS INTEGRATED-CIRCUIT SIMULATION [J].

TAKADA, T ;

YOKOYAMA, K ;

IDA, M ;

SUDO, T .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (05) :719-724

← 1 2 →