NOISE-MARGIN LIMITATIONS ON GALLIUM-ARSENIDE VLSI

被引：5

作者：

LONG, SI

SUNDARAM, M

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1988年 / 23卷 / 04期

关键词：

D O I：

10.1109/4.339

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：893 / 900

页数：8

共 23 条

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