FORMATION OF BURIED AND SURFACE COSI2 LAYERS BY ION-IMPLANTATION

被引：27

作者：

WU, MF

VANTOMME, A

PATTYN, H

LANGOUCHE, G

MAEX, K

VANHELLEMONT, J

VANACKEN, J

VLOEBERGHS, H

BRUYNSERAEDE, Y

机构：

[1] IMEC VZW,B-3030 LOUVAIN,BELGIUM

[2] CATHOLIC UNIV LEUVEN,VASTE STOF FYS & MAGNETISME LAB,B-3000 LOUVAIN,BELGIUM

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 45卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(90)90920-P

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The formation is studied of buried CoSi2 layers and surface CoSi2 layers formed by high-dose ion implantation in an energy range of 30 to 160 keV combined with conventional furnace annealing or with rapid thermal processing. The crystalline quality, the phase of the buried and surface silicide layers, the abruptness of the interfaces and the electrical transport properties are studied by RBS, channeling, cross-sectional TEM, Mössbauer spectroscopy and resistivity measurements. The stability of the buried and surface CoSi2 layers at temperatures between 1000°C and 1200°C is also studied and compared with the results for MBE-grown samples. © 1990.

引用

页码：658 / 663

页数：6

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